GaAs-Based InPBi Quantum Dots for High Efficiency Super-Luminescence Diodes

Capping of InAs/GaAs Quantum Dots for GaAs Based Lasers

GaAs quantum dots

We adopt an atomistic pseudopotential description of the electronic structure of self-assembled, lens shaped InAs quantum dots within the “linear combination of bulk bands” method. We present a detailed comparison with experiment, including quantities such as the single particle electron and hole energy level spacings, the excitonic band gap, the electron-electron, hole-hole and electron hole C...

Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer

An extensive study on molecular beam epitaxy growth conditions of quaternary GaAsSbN as a capping layer (CL) for InAs/GaAs quantum dots (QD) was carried out. In particular, CL thickness, growth temperature, and growth rate were optimized. Problems related to the simultaneous presence of Sb and N, responsible for a significant degradation of photoluminescence (PL), are thereby solved allowing th...

Magneto-luminescence of quasi-zero dimensional In0:25Ga0:75As/GaAs quantum dots

We report photoluminescence measurements on In0:25Ga0:75As/GaAs quantum well and dots grown on (1 1 1)B GaAs substrate in high magnetic ®elds up to 45 Tesla. A well-de®ned PL line with full width at half maximum of approximately 5.5 meV is observed. From an analysis of the zero ®eld transition energy, we point out the importance of an internal piezoelectric ®eld. By analyzing the diamagnetic sh...

Spin hot spots in single - electron GaAs - based quantum dots

Spin relaxation of a single electron in a weakly coupled double quantum dot is calculated numerically. The phonon-assisted spin flip is allowed by the presence of the linear and cubic spin– orbit couplings and nuclear spins. The rate is calculated as a function of the interdot coupling, the magnetic field strength and orientation, and the dot bias. In an in-plane magnetic field, the rate is str...